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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1187 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max.) @ IC= 6A *High Power Dissipation APPLICATIONS *High power switching applications *DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 100 V 80 V 5 V 10 A 2 A 80 W .cn mi e IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1187 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A B 1.4 V A ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 A hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product Switching Times ton Turn-on Time w w scs .i w IC= 6A; VCE= 1V IE= 0; VCB= 10V; ftest= 1.0MHz IC= 1A; VCE= 4V .cn mi e 70 30 240 350 pF 10 MHz 0.5 IB1= -IB2= 0.3A; RL= 5; VCC= 30V; PW=20s; Duty Cycle1% s tstg Storage Time 2.5 s tf Fall Time 0.8 s hFE-1 Classifications O 70-140 Y 120-240 isc Websitewww.iscsemi.cn 2 |
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